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Electronic Devices and Circuits problems

1. A p-n junction diode has
Options
A. low forward and high reverse resistance
B. a non-linear v-i characteristics
C. zero forward current till the forward voltage reaches cut in value
D. all of the above

2. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20�C and 32 nA at 50�C.
Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10�C rise in temperature.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

3. Calculate the stability factor and change in I_C from 25�C to 100�C for, ? = 50, R_B/ R_E = 250, ?I_C0 = 19.9 nA for emitter bias configuration.
Options
A. 42.53, 0.85 ?A
B. 40.91, 0.58 ?A
C. 40.91, 0.58 ?A
D. 41.10, 0.39 ?A

5. An amplifier without feedback has a voltage gain of 50, input resistance of 1 k? and output resistance of 2.5 k?. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is
Options
A. 1/11 k?
B. 1/5 k?
C. 5 kW
D. 11 kW

6. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.
Options
A. True
B. False

7. Crossover distortion behaviour is characteristic of
Options
A. class A O/P stage
B. class B O/P stage
C. class AB output stage
D. common pulse O/P state

8. In which of these is reverse recovery time nearly zero?
Options
A. Zener diode
B. Tunnel diode
C. Schottky diode
D. PIN diode

9. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
Options
A. AB
B. BC
C. CD
D. BD

10. In which region of a CE bipolar transistor is collector current almost constant?
Options
A. Saturation region
B. Active region
C. Breakdown region
D. Both saturation and active region

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