logo

CuriousTab

CuriousTab

Discussion


Home Electronics and Communication Engineering Electronic Devices and Circuits Comments

  • Question
  • Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.

    Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.


  • Options
  • A. Both A and R are true and R is correct explanation of A
  • B. Both A and R are true but R is not a correct explanation of A
  • C. A is true but R is false
  • D. A is false but R is true

  • Correct Answer
  • Both A and R are true and R is correct explanation of A 

    Explanation
    At 20°C, 4 nA, at 30°C, 8 nA, at 40°C, 16 nA, at 50°C, 32 nA.

    Electronic Devices and Circuits problems


    Search Results


    • 1. A p-n junction diode has

    • Options
    • A. low forward and high reverse resistance
    • B. a non-linear v-i characteristics
    • C. zero forward current till the forward voltage reaches cut in value
    • D. all of the above
    • Discuss
    • 2. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

    • Options
    • A. 100
    • B. 99
    • C. 1.01
    • D. 0.99
    • Discuss
    • 3. A transistor has two p-n junctions. The batteries should be connected such that

    • Options
    • A. both junctions are forward biased
    • B. both junctions are reverse biased
    • C. one junction is forward biased and the other is reverse biased
    • D. none of the above
    • Discuss
    • 4. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

      Reason (R): The addition of donor impurity creates additional energy levels below conduction band.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not a correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss
    • 5. In a bipolar transistor which current is largest

    • Options
    • A. collector current
    • B. base current
    • C. emitter current
    • D. base current or emitter current
    • Discuss
    • 6. Calculate the stability factor and change in IC from 25°C to 100°C for, ? = 50, RB/ RE = 250, ?IC0 = 19.9 nA for emitter bias configuration.

    • Options
    • A. 42.53, 0.85 ?A
    • B. 40.91, 0.58 ?A
    • C. 40.91, 0.58 ?A
    • D. 41.10, 0.39 ?A
    • Discuss
    • 7. An increase in temperature increases the width of depletion layer.

    • Options
    • A. True
    • B. False
    • Discuss
    • 8. An amplifier without feedback has a voltage gain of 50, input resistance of 1 k? and output resistance of 2.5 k?. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is

    • Options
    • A. 1/11 k?
    • B. 1/5 k?
    • C. 5 kW
    • D. 11 kW
    • Discuss
    • 9. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

    • Options
    • A. True
    • B. False
    • Discuss
    • 10. Crossover distortion behaviour is characteristic of

    • Options
    • A. class A O/P stage
    • B. class B O/P stage
    • C. class AB output stage
    • D. common pulse O/P state
    • Discuss


    Comments

    There are no comments.

Enter a new Comment