Effect of gate current on thyristor forward breakover voltage In an SCR (thyristor), how does the forward breakover voltage vary with the applied gate current?

Introduction / Context:
The forward breakover voltage of a thyristor is the anode-to-cathode voltage at which the device turns on without a gate signal. In practical use, a gate current is applied to trigger conduction at a lower voltage. Understanding this relationship is essential for reliable gating circuits.

Given Data / Assumptions:

• Standard SCR behavior: gate current aids device turn-on by injecting carriers.
• Device is forward-biased (anode positive with respect to cathode).

Concept / Approach:
Increasing gate current reduces the required anode-cathode voltage to reach conduction by preconditioning the device’s internal junctions (regenerative feedback starts earlier). Therefore, the effective forward breakover voltage is lowered as gate current increases.

Step-by-Step Solution:
At zero gate current, forward breakover is at the datasheet-specified highest value.Apply a small gate current: conduction begins at a lower anode-cathode voltage.As gate current rises further (within allowable limits), the turn-on voltage continues to decrease.

Verification / Alternative check:
SCR V–I curves with different I_g values show a leftward shift of the triggering point as I_g increases, confirming the decrease in forward breakover voltage.

Why Other Options Are Wrong:
Constant or increases: Contradicts the fundamental regenerative turn-on aided by gate drive.
“May be constant or may depend”: Too vague; in practice it does depend and decreases with higher gate current.

Common Pitfalls:
Confusing holding or latching current with breakover voltage; those are separate parameters.

Final Answer:
decreases as gate current is increased