Schottky diode versus p–n diode Compared to a conventional p–n junction diode, a Schottky diode typically has:

Introduction / Context:
Schottky diodes form a metal–semiconductor junction rather than a p–n junction. They are widely used in high-speed switching power supplies due to their low forward drop and negligible reverse recovery charge.

Given Data / Assumptions:

• Forward “cut-in” (knee) voltage of Schottky ~ 0.2–0.4 V (Si), lower than p–n ~ 0.6–0.7 V.
• Reverse leakage of Schottky is typically higher than p–n of the same area and rating.

Concept / Approach:
The barrier at a metal–semiconductor contact is lower than the built-in potential of a p–n junction, yielding a lower forward drop. However, the same structure provides fewer mechanisms to block reverse current tightly, resulting in higher leakage, especially at elevated temperatures.

Step-by-Step Solution:
Compare forward conduction: Schottky has lower Vf → lower cut-in voltage.Compare reverse behavior: Schottky exhibits larger reverse saturation/leakage.Therefore, the correct pair is “lower cut-in voltage and higher reverse saturation current”.

Verification / Alternative check:
Datasheets for power Schottky rectifiers specify low Vf and relatively high IR compared to ultrafast p–n diodes.

Why Other Options Are Wrong:

• (a) claims low leakage, which is not typical.
• (b) and (d) contradict the hallmark low forward drop.
• (e) reverse current is nonzero in real devices.

Common Pitfalls:

• Using Schottky diodes at high temperature without accounting for increased leakage.
• Assuming zero reverse recovery—there is very low charge, but not strictly zero dynamics.

Final Answer:
lower cut-in voltage and higher reverse saturation current