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Home ‣ Electronics ‣ Field Effect Transistors (FET) Comments
  • Question

  • A JFET can be either a current-controlled device or a voltage-controlled device.


  • Options
  • A. True
  • B. False

  • Correct Answer
  • True 

    • Field Effect Transistors (FET) problems

    Search Results

    • 1. Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level.

    • Options
    • A. True
    • B. False
      • Discuss
    • 2. The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.

    • Options
    • A. True
    • B. False
      • Discuss
    • 3. The P-N junction is a barrier to electron flow.

    • Options
    • A. True
    • B. False
      • Discuss
    • 4. The n-type semiconductor material is doped by adding material with electron holes.

    • Options
    • A. True
    • B. False
      • Discuss
    • 5. Germanium is the most widely used semiconductor material because of its stability at high temperatures.

    • Options
    • A. True
    • B. False
      • Discuss
    • 6. The charge carriers in a junction field effect transistor (JFET) will flow from source to drain in a p-channel and from drain to source in an n-channel.

    • Options
    • A. True
    • B. False
      • Discuss
    • 7. In a voltage-divider JFET circuit, ID is a maximum when VGS = 0 V.

    • Options
    • A. True
    • B. False
      • Discuss
    • 8. An enhancement-type MOSFET or E-MOSFET can be turned on when the channel is depleted.

    • Options
    • A. True
    • B. False
      • Discuss
    • 9. A MOSFET has an isolated gate.

    • Options
    • A. True
    • B. False
      • Discuss
    • 10. The gate-biased JFET characteristic curve includes IDS.

    • Options
    • A. True
    • B. False
      • Discuss

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