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Home ‣ Electronics ‣ Field Effect Transistors (FET) Comments
  • Question

  • Breakdown voltage and pinch-off voltage of a JFET are different terms for the same voltage level.


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  • A. True
  • B. False

  • Correct Answer
  • False 

    • Field Effect Transistors (FET) problems

    Search Results

    • 1. The forward voltage drop for a germanium transistor is 0.7 V and for a silicon transistor is 0.3 V.

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    • A. True
    • B. False
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    • 2. The P-N junction is a barrier to electron flow.

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    • A. True
    • B. False
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    • 3. The n-type semiconductor material is doped by adding material with electron holes.

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    • A. True
    • B. False
      • Discuss
    • 4. Germanium is the most widely used semiconductor material because of its stability at high temperatures.

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    • A. True
    • B. False
      • Discuss
    • 5. A covalent bond is when atoms lose valence shell electrons.

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    • A. True
    • B. False
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    • 6. A JFET can be either a current-controlled device or a voltage-controlled device.

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    • A. True
    • B. False
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    • 7. The charge carriers in a junction field effect transistor (JFET) will flow from source to drain in a p-channel and from drain to source in an n-channel.

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    • A. True
    • B. False
      • Discuss
    • 8. In a voltage-divider JFET circuit, ID is a maximum when VGS = 0 V.

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    • A. True
    • B. False
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    • 9. An enhancement-type MOSFET or E-MOSFET can be turned on when the channel is depleted.

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    • A. True
    • B. False
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    • 10. A MOSFET has an isolated gate.

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    • A. True
    • B. False
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