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Electronics
‣
Field Effect Transistors (FET)
Comments
Question
The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are usually connected:
Options
A. in parallel
B. with separate insulation
C. with separate inputs
D. in series
Correct Answer
in series
Field Effect Transistors (FET) problems
Search Results
1. When an input signal reduces the channel size, the process is called:
Options
A. enhancement
B. substrate connecting
C. gate charge
D. depletion
Show Answer
Scratch Pad
Discuss
Correct Answer: depletion
2. In the constant-current region, how will the I
DS
change in an n-channel JFET?
Options
A. As V
GS
decreases I
D
decreases.
B. As V
GS
increases I
D
increases.
C. As V
GS
decreases I
D
remains constant.
D. As V
GS
increases I
D
remains constant.
Show Answer
Scratch Pad
Discuss
Correct Answer: As V
GS
decreases I
D
decreases.
3. What is the transconductance of an FET when △I
D
= 1 mA and △V
GS
= 1 V?
Options
A. 1 kS
B. 1 mS
C. 1 kΩ
D. 1 mΩ
Show Answer
Scratch Pad
Discuss
Correct Answer: 1 mS
4. Which JFET configuration would connect a high-resistance signal source to a low-resistance load?
Options
A. source follower
B. common-source
C. common-drain
D. common-gate
Show Answer
Scratch Pad
Discuss
Correct Answer: source follower
5. When applied input voltage varies the resistance of a channel, the result is called:
Options
A. saturization
B. polarization
C. cutoff
D. field effect
Show Answer
Scratch Pad
Discuss
Correct Answer: field effect
6. In an n-channel JFET, what will happen at the pinch-off voltage?
Options
A. the value of V
DS
at which further increases in V
DS
will cause no further increase in I
D
B. the value of V
GS
at which further decreases in V
GS
will cause no further increases in I
D
C. the value of V
DG
at which further decreases in V
DG
will cause no further increases in I
D
D. the value of V
DS
at which further increases in V
GS
will cause no further increases in I
D
Show Answer
Scratch Pad
Discuss
Correct Answer: the value of V
DS
at which further increases in V
DS
will cause no further increase in I
D
7. I
DSS
can be defined as:
Options
A. the minimum possible drain current
B. the maximum possible current with V
GS
held at ?4 V
C. the maximum possible current with V
GS
held at 0 V
D. the maximum drain current with the source shorted
Show Answer
Scratch Pad
Discuss
Correct Answer: the maximum possible current with V
GS
held at 0 V
8. A "U" shaped, opposite-polarity material built near a JFET-channel center is called the:
Options
A. gate
B. block
C. drain
D. heat sink
Show Answer
Scratch Pad
Discuss
Correct Answer: gate
9. What is the input impedance of a common-gate configured JFET?
Options
A. very low
B. low
C. high
D. very high
Show Answer
Scratch Pad
Discuss
Correct Answer: very low
10. With the E-MOSFET, when gate input voltage is zero, drain current is:
Options
A. at saturation
B. zero
C. I
DSS
D. widening the channel
Show Answer
Scratch Pad
Discuss
Correct Answer: zero
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