Discussion
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- Question
Which JFET configuration would connect a high-resistance signal source to a low-resistance load?
Options- A. source follower
- B. common-source
- C. common-drain
- D. common-gate
- Correct Answer
- source follower
- 1. When applied input voltage varies the resistance of a channel, the result is called:
Options- A. saturization
- B. polarization
- C. cutoff
- D. field effect Discuss
- 2. When VGS = 0 V, a JFET is:
Options- A. saturated
- B. an analog device
- C. an open switch
- D. cut off Discuss
- 3. The type of bias most often used with E-MOSFET circuits is:
Options- A. constant current
- B. drain-feedback
- C. voltage-divider
- D. zero biasing Discuss
- 4. Using voltage-divider biasing, what is the voltage at the gate VGS?
Options- A. 5.2 V
- B. 4.2 V
- C. 3.2 V
- D. 2.2 V Discuss
- 5. When not in use, MOSFET pins are kept at the same potential through the use of:
Options- A. shipping foil
- B. nonconductive foam
- C. conductive foam
- D. a wrist strap Discuss
- 6. What is the transconductance of an FET when △ID = 1 mA and △VGS = 1 V?
Options- A. 1 kS
- B. 1 mS
- C. 1 kΩ
- D. 1 mΩ Discuss
- 7. In the constant-current region, how will the IDS change in an n-channel JFET?
Options- A. As VGS decreases ID decreases.
- B. As VGS increases ID increases.
- C. As VGS decreases ID remains constant.
- D. As VGS increases ID remains constant. Discuss
- 8. When an input signal reduces the channel size, the process is called:
Options- A. enhancement
- B. substrate connecting
- C. gate charge
- D. depletion Discuss
- 9. The overall input capacitance of a dual-gate D-MOSFET is lower because the devices are usually connected:
Options- A. in parallel
- B. with separate insulation
- C. with separate inputs
- D. in series Discuss
- 10. In an n-channel JFET, what will happen at the pinch-off voltage?
Options- A. the value of VDS at which further increases in VDS will cause no further increase in ID
- B. the value of VGS at which further decreases in VGS will cause no further increases in ID
- C. the value of VDG at which further decreases in VDG will cause no further increases in ID
- D. the value of VDS at which further increases in VGS will cause no further increases in ID Discuss
Field Effect Transistors (FET) problems
Search Results
Correct Answer: field effect
Correct Answer: saturated
Correct Answer: drain-feedback
Correct Answer: 5.2 V
Correct Answer: conductive foam
Correct Answer: 1 mS
Correct Answer: As VGS decreases ID decreases.
Correct Answer: depletion
Correct Answer: in series
Correct Answer: the value of VDS at which further increases in VDS will cause no further increase in ID
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