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Home Electronics Semiconductor Principles Comments

  • Question
  • What electrical characteristic of intrinsic semiconductor material is controlled by the addition of impurities?


  • Options
  • A. conductivity
  • B. resistance
  • C. power
  • D. all of the above

  • Correct Answer
  • conductivity 


  • Semiconductor Principles problems


    Search Results


    • 1. A P-N junction mimics a closed switch when it:

    • Options
    • A. has a low junction resistance
    • B. is reverse biased
    • C. cannot overcome its barrier voltage
    • D. has a wide depletion region
    • Discuss
    • 2. Intrinsic semiconductor material is characterized by a valence shell of how many electrons?

    • Options
    • A. 1
    • B. 2
    • C. 4
    • D. 6
    • Discuss
    • 3. When is a P-N junction formed?

    • Options
    • A. in a depletion region
    • B. in a large reverse biased region
    • C. the point at which two opposite doped materials come together
    • D. whenever there is a forward voltage drop
    • Discuss
    • 4. In "n" type material, majority carriers would be:

    • Options
    • A. holes
    • B. dopants
    • C. slower
    • D. electrons
    • Discuss
    • 5. What is a type of doping material?

    • Options
    • A. extrinsic semiconductor material
    • B. pentavalent material
    • C. n-type semiconductor
    • D. majority carriers
    • Discuss
    • 6. What can a semiconductor sense?

    • Options
    • A. magnetism
    • B. temperature
    • C. pressure
    • D. all of the above
    • Discuss
    • 7. How many valence electrons are in every semiconductor material?

    • Options
    • A. 1
    • B. 2
    • C. 3
    • D. 4
    • Discuss
    • 8. Elements with 1, 2, or 3 valence electrons usually make excellent:

    • Options
    • A. conductors
    • B. semiconductors
    • C. insulators
    • D. neutral
    • Discuss
    • 9. When and who discovered that more than one transistor could be constructed on a single piece of semiconductor material:

    • Options
    • A. 1949, William Schockley
    • B. 1955, Walter Bratten
    • C. 1959, Robert Noyce
    • D. 1960, John Bardeen
    • Discuss
    • 10. Solid state devices were first manufactured during:

    • Options
    • A. World War 2
    • B. 1904
    • C. 1907
    • D. 1960
    • Discuss


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