List I (Devices) | List II (characteristic) | ||
---|---|---|---|
A. | BJT | 1. | Voltage controlled negative resistance |
B. | MOSFET | 2. | High current gain |
C. | Tunnel diode | 3. | Voltage regulation |
D. | Zener diode | 4. | High input impedance |
to get apply
aebxdx +
ae-bxdx,
we get =
.
Since time constant is , time contant become twice.
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