Assertion (A): Gunn diode is a transferred electron device.

Reason (R): A Gunn oscillator uses the phenomenon of transferred electron effect.

A TWT is a broadband device. Its main components are electron gun (to produce the electron beam) and a structure supporting the slow electromagnetic wave.

The velocity of wave propagation along the helix structure is less than velocity of light.

The beam and wave travel along the structure at the same speed.

Thus interaction occurs between beam and wave and the beam delivers energy to the RF wave.

Therefore the signal gets strengthened and amplified output is delivered at the other end of tube.

The main features of TWT are :

1. Frequency range - 0.5 GHz to 90 GHz

2. Power output - 5 mW at low frequencies(less than 20 GHz) 250 kW (continuous wave) at 3 GHz 10 MW (pulsed) at 3 GHz

3. Efficiency - about 5 to 20%

4. Noise - about 5 dB for low power TWT 25 dB for high power TWT

TWT is used as RF amplifier in broadband microwave receivers, repeater amplifier in broad band communication systems, communication satellites etc.

These analysis uses cylindrical coordinates.

In circular waveguide TE₁₁ mode has the lowest cut off frequency and is the dominant mode.

If D is diameter of waveguide

?_c = 1.706 D for TE₁₁ mode

?_c = 1.029 D for TE₂₁ mode

?_c = 0.82 D for TE₀₁ mode

?_c = 1.306 D for TM₀₁ mode.

Its parts are electron gun, resonator, repeller and output coupling.

It operates on the principle of positive feed back.

The repeller electrode is at negative potential and sends the partially bunched electron beam back to resonator cavity.

This positive feedback supports oscillations. Its feature are:

1. Frequency range - 2 to 100 GHz

2. Power output - 10 MW to about 2 W

3. Efficiency - 10 - 20 %

Its applications include radar receivers, local oscillator in microwave devices, oscillator for microwave measurements in laboratories etc.

It exhibits negative resistance and operates on the principle of avalanche breakdown.

Impatt diode circuits are classified as broadly tunable circuit, low Q circuit and high Q circuit.

The impedance of Impatt diode is a few ohms. The word Impatt stands for Impact Avalanche Transit Time diode.

The features of Impatt diode oscillator are : frequency 1 to 300 GHz, Power output (0.5 W to 5 W for single diode circuit and upto 40 W for combination of several diodes), efficiency about 20%.

Its applications include police radar systems, low power microwave transmitter etc.

Its special feature is easy access to top surface so that minor adjustments can be made after circuit fabrication.

The high dielectric constant of the substrate reduces guide wavelength and circuit dimensions.

A microstrip line is the most commomly used transmission structure for microwave integrated circuits.