Reason (R): A PIN diode uses heavily doped p and n materials.
The effective/width of depletion layer increases by the width of i layer. It can be used as a voltage controlled attenuator.
At high frequencies the rectification effect ceases and impedance of diode is effectively that of i layer.
This impedance varies with the applied bias. It is used in high frequency switching circuits, limiters, modulators etc.
List I | List II | ||
---|---|---|---|
A. | T (Reflection coefficient) = 0 | 1. | (ZL - Zo)/(ZL + Zo) |
B. | T = - 1 | 2. | ZL = Zo |
C. | T = + 1 | 3. | ZL = 0 |
D. | - 1 < T < + 1 | 4. | ZL = ? |
Reason (R): For a ferromagnetic material for T > ?f.
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