Assertion (A): Doping level in extrinsic semiconductors is very small. Reason (R

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Question
Assertion (A): Doping level in extrinsic semiconductors is very small.
Reason (R): Additional of impurity in the ratio of 1 part in 10⁸ parts increases the number of charge carriers by about 20.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

Correct Answer

Both A and R are true and R is correct explanation of A

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3. The temperature coefficient of resistivity of semiconductors is
Options
A. positive
B. negative
C. may be positive or negative
D. very low

5. Assertion (A): In an intrinsic semiconductor J = (?_n x ?_p)en_i.
Reason (R): Intrinsic charge concentration n_i at temperature T is given by n_i² = A₀ T³ e^-E_G0/kT.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

9. An electron in a metal suffers collision and if the probability of it being scattered over an angle d? is 2p P(?) sin ? d? where P(?) is an arbitrary function of scattering angle ?, then
Options
A. 2pP(?) sin ? d? = 0
B. 2pP(?) sin ? d? = 2
C. 2pP(?) sin ? d? = -1
D. 2pP(?) sin ? d? = 1

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