A good dielectric should have low losses good heat conductivity high intrinsic s

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1. Assertion (A): In an intrinsic semiconductor J = (?_n x ?_p)en_i.
Reason (R): Intrinsic charge concentration n_i at temperature T is given by n_i² = A₀ T³ e^-E_G0/kT.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

2. A parallel plate capacitor has area of plate A and plate separation d. Its capacitance is C. A metallic plate P of area A and negligible thickness is added as shown in Figure. The new value of capacitance is
Options
A. C
B. 2C
C. 0.5 C
D. 0.25 C

4. Assertion (A): In ionic dielectrics, P = P_e + P_i.
Reason (R): In ionic crystals, permanent electric dipole moment is zero.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

6. The temperature coefficient of resistivity of semiconductors is
Options
A. positive
B. negative
C. may be positive or negative
D. very low

9. Assertion (A): Doping level in extrinsic semiconductors is very small.
Reason (R): Additional of impurity in the ratio of 1 part in 10⁸ parts increases the number of charge carriers by about 20.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

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