The dipole moment per unit volume P as a function of E for an insulator is P = ?

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Question
The dipole moment per unit volume P as a function of E for an insulator is
Options
A. P = ?₀ E(?_r)
B. P = ?₀ E
C. P = ?₀(?_r - 1) E
D. P =

Correct Answer

P = ?₀(?_r - 1) E

Materials and Components problems

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1. Assertion (A): In liquids and glassy substances, dielectric losses occur.
Reason (R): The orientation polarization in many substances is frequency dependent.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

2. Consider the following statement: In case of a superconductor
1. B = 0
2. ?_r is high
3. diamagnetism is high
4. transition temperature varies with isotopic mass.
Of the above statements
Options
A. 1 and 2 are correct
B. 2, 3, 4 are correct
C. 1, 3, 4 are correct
D. 2, 4 are correct

4. Assertion (A): For a dielectric, P = ?₀(?_r - 1) E.
Reason (R): Dipole moment per unit volume is called polarization of dielectric.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

5. If v is velocity of electron, ?₀ is absolute permittivity, m is mass of electron, e is charge on electron and r is the radius of orbit of electron in hydrogen atom, the stability of orbit requires the following equation to be satisfied
Options
A.
B.
C.
D.

7. Assertion (A): In ionic dielectrics, P = P_e + P_i.
Reason (R): In ionic crystals, permanent electric dipole moment is zero.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

9. A parallel plate capacitor has area of plate A and plate separation d. Its capacitance is C. A metallic plate P of area A and negligible thickness is added as shown in Figure. The new value of capacitance is
Options
A. C
B. 2C
C. 0.5 C
D. 0.25 C

10. Assertion (A): In an intrinsic semiconductor J = (?_n x ?_p)en_i.
Reason (R): Intrinsic charge concentration n_i at temperature T is given by n_i² = A₀ T³ e^-E_G0/kT.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

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