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  • Question
  • If a metal specimen has n valence electrons per m3 each having charge e and mass m and t is the relaxations time, the conductivity is


  • Options
  • A. If a metal specimen has n valence electrons per m3 each having charge e and mass m and t is the rela
  • B. If a metal specimen has n valence electrons per m3 each having charge e and mass m and t is the rela
  • C. If a metal specimen has n valence electrons per m3 each having charge e and mass m and t is the rela
  • D. If a metal specimen has n valence electrons per m3 each having charge e and mass m and t is the rela

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  • Materials and Components problems


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    • 1. Assertion (A): Rochelle salt and Barium titanate are both ferroelectric.

      Reason (R): Ferroelectric materials exhibit hysteresis effect.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss
    • 2. Diamagnetic materials do not have permanent magnetic dipoles.

    • Options
    • A. True
    • B. False
    • Discuss
    • 3. The core of an atom consists of

    • Options
    • A. nucleus
    • B. nucleus and all orbits
    • C. nucleus and inner orbits
    • D. none of the above
    • Discuss
    • 4. Assertion (A): Relative permittivity is determined by the atomic structure of the material.

      Reason (R): Absolute permittivity is determined by the atomic structure of the material.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss
    • 5. The wavelength of light emitted by GaAs laser is 8670 x 10-10 m. If h = 6.626 x 10-34 Js, velocity of light = 3 x 108 m/s and eV = 1.602 x 10-19 J, the energy gap in GaAs is

    • Options
    • A. 0.18 eV
    • B. 0.7 eV
    • C. 1.43 eV
    • D. 2.39 eV
    • Discuss
    • 6. Assertion (A): Intrinsic resistivity of silicon is lower than that of germanium.

      Reason (R): Magnitude of free electron concentration in germanium is more than that of silicon.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss
    • 7. In a conductor the current flow is due to

    • Options
    • A. holes
    • B. electrons
    • C. ions
    • D. electrons and ions
    • Discuss
    • 8. Assertion (A): The equation D = ?0?rE is applicable only to isotropic materials.

      Reason (R): In polycrystalline materials, the directional effects are absent.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss
    • 9. A dielectric of relative permittivity ?r is subjected to a homogeneous electric field E. The dipole moment P per unit volume is given by

    • Options
    • A. P = constant
    • B. P = ?0 E
    • C. P = ?0(?r - 1) E
    • D. P = ?r E
    • Discuss
    • 10. As per Matthiessen's rule, the total resistivity r of a conductor can be written as r = ri + aT, where ri and a are constants and T is absolute temperature. At very low temperatures

    • Options
    • A. aT = 0
    • B. aT > ri
    • C. aT ? ri
    • D. aT < ri
    • Discuss


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