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Question

Match the following:

List I List II

A. Silicon 1. is trivalent

B. Arsenic 2. rarely used as semiconductor

C. Indium 3. is pentavalent

D. Germanium 4. intrinsic semiconductor

Options
A. A-1, B-2, C-3, D-4
B. A-4, B-3, C-2, D-1
C. A-4, B-3, C-1, D-2
D. A-2, B-1, C-3, D-4

Correct Answer

A-4, B-3, C-1, D-2

Matching Questions problems

Search Results

1. Match the following:

	List I (DOS commands)		List II (Meaning)
A.	ATTRIB	1.	Displays all directories and subdirectories
B.	SCAN DISK	2.	Moves files to another director
C.	MOVE	3.	Checks the status of disc
D.	TREE	4.	Hides a file

Options
A. A-1, B-2, C-3, D-4
B. A-3, B-4, C-2, D-1
C. A-2, B-3, C-4, D-1
D. A-4, B-3, C-2, D-1

2. Match the following:

	List I (Camera pick up tubes)		List II (Developed by)
A.	CCD charger	1.	Toshiba
B.	New vicon	2.	Philips
C.	Plumbicon	3.	Matushita
D.	Chalnicon	4.	RCA

Options
A. A-3, B-4, C-1, D-2
B. A-4, B-3, C-2, D-1
C. A-4, B-3, C-1, D-2
D. A-1, B-2, C-3, D-4

3. Match the following:

	List I		List II
A.	p type semiconductor	1.	silicon
B.	n type semiconductor	2.	holes are majority carriers
C.	Intrinsic semiconductor	3.	electrons are majority carriers
D.	Tungsten	4.	is a metal

Options
A. A-2, B-3, C-1, D-4
B. A-1, B-2, C-3, D-4
C. A-4, B-3, C-2, D-1
D. A-3, B-1, C-2, D-4

4. Match the following:

	List I f(t)		List II F(s)
A.	t	1.
B.	e^at	2.
C.	u(t)	3.
D.	cos ?t	4.

Options
A. A-1, B-3, C-2, D-4
B. A-1, B-4, C-2, D-3
C. A-2, B-4, C-1, D-3
D. A-4, B-3, C-1, D-2

5. Match the following:

	List I (Logic family)		List II (Characteristic of logic family)
A.	TTL	1.	Maximum power Consumption
B.	ECL	2.	Highest Packing Density
C.	NMOS	3.	Least Power Consumption
D.	CMOS	4.	Saturated Logic

Options
A. A-1, B-4, C-2, D-3
B. A-1, B-4, C-3, D-2
C. A-4, B-1, C-2, D-3
D. A-4, B-1, C-3, D-2

6. Match the following:

	List I		List II
A.		1.	Zero
B.		2.	0.2
C.		3.	Actuator
D.		4.	infinity

Options
A. A-1, B-2, C-3, D-4
B. A-1, B-3, C-2, D-4
C. A-4, B-3, C-2, D-1
D. A-4, B-2, C-3, D-1

7. Match the following:

	List I		List II
A.	Resistance	1.	M^-1L^-2T²I²
B.	Inductance	2.	ML²T^-2I^-2
C.	Capacitance	3.	M^-1L^-2T⁴I²
D.	Reluctance	4.	ML²T^-3I^-2

Options
A. A-1, B-2, C-3, D-4
B. A-2, B-1, C-3, D-4
C. A-4, B-2, C-3, D-1
D. A-2, B-4, C-3, D-1

8. Match the following:

	List I		List II
A.	Horn antenna	1.	High directivity
B.	Parabolic antenna	2.	Very high directivity
C.	Lens antenna	3.	Moderate directivity

Options
A. A-1, B-2, C-3
B. A-3, B-2, C-1
C. A-3, B-1, C-2
D. A-1, B-3, C-2

9. Match the following:

	Microwave Measuring Instruments		Measurements Effected
A.	Bolometer	1.	Reflection coefficients
B.	VSWR meter	2.	Half power beam widths
C.	Cavity wave meter	3.	Microwave power
D.	Pattern recorder	4.	Microwave frequency

Options
A. A-2, B-1, C-4, D-3
B. A-3, B-1, C-4, D-2
C. A-2, B-4, C-1, D-3
D. A-3, B-4, C-1, D-2

10. Match the following:

	List I (FET Parameters)		List II (Typical Values)
A.	g_m for JFET	1.	25 kW
B.	r_d for JFET	2.	0.01 siemen
C.	r_d for MOSFET	3.	0.5 mW
D.	g_g for JFET	4.	10^-8 siemen

Options
A. A-1, B-2, C-3, D-4
B. A-2, B-3, C-1, D-4
C. A-4, B-2, C-3, D-1
D. A-4, B-3, C-2, D-1

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