A TWT is a broadband device. Its main components are electron gun (to produce the electron beam) and a structure supporting the slow electromagnetic wave.
The velocity of wave propagation along the helix structure is less than velocity of light.
The beam and wave travel along the structure at the same speed.
Thus interaction occurs between beam and wave and the beam delivers energy to the RF wave.
Therefore the signal gets strengthened and amplified output is delivered at the other end of tube.
The main features of TWT are :
1. Frequency range - 0.5 GHz to 90 GHz
2. Power output - 5 mW at low frequencies(less than 20 GHz) 250 kW (continuous wave) at 3 GHz 10 MW (pulsed) at 3 GHz
3. Efficiency - about 5 to 20%
4. Noise - about 5 dB for low power TWT 25 dB for high power TWT
TWT is used as RF amplifier in broadband microwave receivers, repeater amplifier in broad band communication systems, communication satellites etc.
List I (Digital circuit) | List II (Circuit type) | ||
---|---|---|---|
A. | BCD to 7 segment decoder | 1. | sequential circuit |
B. | 4-to-1 MUX | 2. | combinational circuit |
C. | 4 bit shift register | 3. | neither sequential nor combinational circuit |
List I | List II | ||
---|---|---|---|
A. | PMMC | 1. | Square law type scale |
B. | Moving iron | 2. | Very good response |
C. | Thermo-couple | 3. | Linear scale |
D. | Electrostatic | 4. | Voltmeter |
Reason (R): A high dv/dt results in charging current in the thyristor.
Reason (R): If permanent dipoles are absent, ?r varies with temperature.
Reason (R): The structure of CO2 is O = C = O.
Reason (R): ae and ai are independent of temperature.
This intercept is constant because ae and ai are independent of temperature.
Reason (R): A thyristor can conduct only when it is forward biased.
Reason (R): In ionic crystals, permanent electric dipole moment is zero.
Therefore P = Pe + Pi.
Reason (R): Line loading means addition of inductance to satisfy the condition L = RC/G.
The stray capacitances and inductances become important and affect the operation of the circuit.
At low frequencies the transit time between cathode and anode is a small fraction of period of oscillation.
However, at microwave frequencies this transit time becomes comparable to time period of oscillations.
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