logo

CuriousTab

CuriousTab

Discussion

Home ‣ Electronics and Communication Engineering ‣ Microwave Communication See What Others Are Saying!
  • Question

  • Both Impatt and Trapatt devices use avalanche effect


  • Options
  • A. True
  • B. False

  • Correct Answer
  • True 

    Explanation
    An Impatt diode has n+ - p - i - p + structure and is used with reverse bias.

    It exhibits negative resistance and operates on the principle of avalanche breakdown.

    Impatt diode circuits are classified as broadly tunable circuit, low Q circuit and high Q circuit.

    The impedance of Impatt diode is a few ohms. The word Impatt stands for Impact Avalanche Transit Time diode.

    The features of Impatt diode oscillator are : frequency 1 to 300 GHz, Power output (0.5 W to 5 W for single diode circuit and upto 40 W for combination of several diodes), efficiency about 20%.

    Its applications include police radar systems, low power microwave transmitter etc.

    Avalanche diode can also be operated in large signal high efficiency mode called Trapped Avalanche Transit Time mode.

    The Trapatt oscillations depend on the delay in the current caused by avalanche process.

    The avalanche delay makes it possible to increase the diode voltage well above the breakdown voltage.

    Therefore a very rapid multiplication of charge carriers occurs. A Trapatt diode is also a negative resistance device.

    The features of Trapatt diode oscillator are : Frequency 3 to 50 GHz, Power output 1-3 W, efficiency about 25%.

    Its applications are low power doppler radar, microwave beacon landing system etc.

    More questions

    • 1. If an amplifier with gain of - 1000 and feedback factor ? = - 0.1 had a gain change of 20% due to temperature, the change in gain of the feedback amplifier would be

    • Options
    • A. 10%
    • B. 5%
    • C. 0.2%
    • D. 0.01%
      • Discuss
    • 2. Permeability is analogous to

    • Options
    • A. resistivity
    • B. retentivity
    • C. conductivity
    • D. coercivity
      • Discuss
    • 3. In a Gunn diode oscillator drift velocity of electron is 107 cm/s and active region length is 10 x 10-4 cm. The natural frequency of oscillation is

    • Options
    • A. 1 MHz
    • B. 10 MHz
    • C. 1 GHz
    • D. 10 GHz
      • Discuss
    • 4. A cycloconverter is a group of controlled rectifiers.

    • Options
    • A. True
    • B. False
      • Discuss
    • 5. If the valence electron is separated from a copper atom, the remaining part of atom has a net charge of

    • Options
    • A. 1
    • B. - 1
    • C. 0
    • D. + 3
      • Discuss
    • 6. A single phase bridge type cycloconverter uses eight thyristors.

    • Options
    • A. True
    • B. False
      • Discuss
    • 7. ?r is determined by the atomic structure of the dielectric.

    • Options
    • A. True
    • B. False
      • Discuss
    • 8. An SBS can conduct is one direction only.

    • Options
    • A. True
    • B. False
      • Discuss
    • 9. The resistivity of intrinsic semiconductors, at room temperature, is of the order of

    • Options
    • A. 1 ?-m
    • B. 1000 ?-m
    • C. 106 ?-m
    • D. 10-3 ?-m
      • Discuss
    • 10. The orientation polarization of a polyatomic gas is inversely proportional to absolute temperature.

    • Options
    • A. True
    • B. False
      • Discuss

    Comments

    There are no comments.
Enter a new Comment




Aptitude

Engineering

Programming

Reasoning

Links

Copyright ©CuriousTab. All rights reserved.