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  • Question
  • In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be


  • Options
  • A. 0.5 eV above valence band
  • B. 0.28 eV above valence band
  • C. 0.1 eV above valence band
  • D. below the valence band

  • Correct Answer
  • 0.28 eV above valence band 

    Explanation
    Addition of acceptor atom brings Fermi level closer to valence band.

    Electronic Devices and Circuits problems


    Search Results


    • 1. As compared to an ordinary semiconductor diode, a Schottky diode

    • Options
    • A. has higher reverse saturation current
    • B. has higher reverse saturation current and higher cut in voltage
    • C. has higher reverse saturation current and lower cut in voltage
    • D. has lower reverse saturation current and lower cut in voltage
    • Discuss
    • 2. The minority carrier life time and diffusion constant in a semiconductor material are respectively 100 microsecond and 100 cm2/sec. The diffusion length is

    • Options
    • A. 0.1 cm
    • B. 0.01 cm
    • C. 0.0141 cm
    • D. 1 cm
    • Discuss
    • 3. Assertion (A): A p-n junction has high resistance in reverse direction.

      Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not a correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
    • Discuss
    • 4. Work function of oxide coated cathode is much lower than that of tungsten cathode.

    • Options
    • A. True
    • B. False
    • Discuss
    • 5. An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is

    • Options
    • A. 0 to 200 ?
    • B. 200 - 400 ?
    • C. 200 ? and above
    • D. 400 ? and above
    • Discuss
    • 6. The most commonly used semiconductor material is

    • Options
    • A. silicon
    • B. germanium
    • C. mixture of silicon and germanium
    • D. none of the above
    • Discuss
    • 7. Which of the following is true as regards photo emission?

    • Options
    • A. Velocity of emitted electrons is dependent on light intensity
    • B. Rate of photo emission is inversely proportional to light intensity
    • C. Maximum velocity of electron increases with decreasing wave length
    • D. Both holes and electrons are produced
    • Discuss
    • 8. If aac for transistor is 0.98 then ?ac is equal to

    • Options
    • A. 51
    • B. 49
    • C. 47
    • D. 45
    • Discuss
    • 9. Calculate wave impedance for TE mode

    • Options
    • A. (377)?
    • B. 226 ?
    • C. ?
    • D. 629 ?
    • Discuss
    • 10. In a 100 turn coil, if the flux through each turn is (t3 - 2t)mWb, the magnitude of the induced emf in the coil at a time of 4 sec is

    • Options
    • A. 46 mV
    • B. 56 mV
    • C. 4.6 V
    • D. 5.6 V
    • Discuss


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