Reason (R): The unknown impedance is mounted at the end of slotted line.
List I | List II | ||
---|---|---|---|
A. | Digital counter | 1. | Measurement of harmonics |
B. | Schering Bridge | 2. | Measurement of frequency |
C. | Meggar | 3. | Measurement of loss angle of dielectric |
D. | Spectrum analyser | 4. | Measurement of insulation resistance |
List I | List II (Value of tan-1 ![]() |
||
---|---|---|---|
A. | ![]() |
1. | 90° |
B. | ![]() |
2. | 0° |
C. | ![]() |
3. | 50° |
List I (Circuits) | List II (Output dc voltage) | ||
---|---|---|---|
A. | Single phase half wave converter | 1. | ![]() |
B. | Fully controlled bridge converter (1 phase) with RLE load | 2. | ![]() |
C. | 3 Phase full converter | 3. | ![]() |
D. | Single phase full wave converter (M-2) connection | 4. | ![]() |
Reason (R): The imaginary part of electric constant is responsible for dielectric losses.
Reason (R): The wall currents in a circular waveguide in TEQ1 mode are completely circumferential.
List I | List II | ||
---|---|---|---|
A. | 45 | 1. | 10110100 |
B. | 90 | 2. | 11010010 |
C. | 180 | 3. | 01011010 |
D. | 210 | 4. | 00101101 |
5. | 10101000 |
Reason (R): Capacitance of an isolated conducting sphere R in vacuum is 4 p?0 R farads.
Reason (R): PIN diode has very high resistance when reverse biased and very low resistance when forward biased.
The effective/width of depletion layer increases by the width of i layer. It can be used as a voltage controlled attenuator.
At high frequencies the rectification effect ceases and impedance of diode is effectively that of i layer.
This impedance varies with the applied bias. It is used in high frequency switching circuits, limiters, modulators etc.
Reason (R): p type semiconductor is obtained by adding trivalent impurity to intrinsic semiconductor.
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