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- Question
The normal operation of JFET is
Options- A. constant voltage region
- B. constant current region
- C. both constant voltage and constant current regions
- D. either constant voltage or constant current region
- Correct Answer
- constant current region
ExplanationIn major portion of drain characteristics ID is constant.
Electronic Devices and Circuits problems
Search Results
- 1. A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.
Options- A. 2.26 eV
- B. 1.98 eV
- C. 1.17 eV
- D. 0.74 eV Discuss
Correct Answer: 2.26 eV
Explanation:
From Plank equation
joule
to convert it into electron volt it will be divided by 1.6 x 10-19.
- 2. Ferrite have
Options- A. low copper loss
- B. low eddy current loss
- C. low resistivity
- D. higher specific gravity compared to iron Discuss
Correct Answer: low resistivity
Explanation:
Ferrite is a low density material of composition with Fe2O3 x O, where x is a bivalent metal, such as Cobart, Ni, Mn. These magnetic materials having very low loss of current and used in high frequency circuit.- 3. A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.
Options- A. 30 pA
- B. 40 pA
- C. 50 pA
- D. 60 pA Discuss
Correct Answer: 40 pA
Explanation:
By increasing of temperature by 10°C, Io become double so by increasing temperature 20°C, Io become 4 time than initial value... and it is 40 PA.- 4. Recombination produces new electron-hole pairs
Options- A. True
- B. False Discuss
Correct Answer: False
Explanation:
Due to recombination the number of electron-hole pairs is reduced.- 5. In an n channel JFET, the gate is
Options- A. n type
- B. p type
- C. either n or p
- D. partially n & partially p Discuss
Correct Answer: p type
Explanation:
Since channel is n type gate must be p type.- 6. In a degenerate n type semiconductor material, the Fermi level,
Options- A. is in valence band
- B. is in conduction band
- C. is at the centre in between valence and conduction bands
- D. is very near valence band Discuss
Correct Answer: is in conduction band
Explanation:
This is due to high level of doping.- 7. The power dissipation in a transistor is the product of
Options- A. emitter current and emitter to base voltage
- B. emitter current and collector to emitter voltage
- C. collector current and collector to emitter voltage
- D. none of the above Discuss
Correct Answer: collector current and collector to emitter voltage
Explanation:
Maximum power dissipation occurs at collector junction.- 8. In an n-p-n transistor biased for operation in forward active region
Options- A. emitter is positive with respect to base
- B. collector is positive with respect to base
- C. base is positive with respect to emitter and collector is positive with respect to base
- D. none of the above Discuss
Correct Answer: base is positive with respect to emitter and collector is positive with respect to base
Explanation:
In forward active mode emitter base junction is forward biased and base collector junction is reverse biased.- 9. In a zener diode
Options- A. the forward current is very high
- B. sharp breakdown occurs at a certain reverse voltage
- C. the ratio v-i can be negative
- D. there are two p-n junctions Discuss
Correct Answer: sharp breakdown occurs at a certain reverse voltage
Explanation:
When reverse voltage equals breakdown value it starts conducting and voltage does not increase further.- 10. As compared to an ordinary semiconductor diode, a Schottky diode
Options- A. has lower cut in voltage
- B. has higher cut in voltage
- C. lower reverse saturation current
- D. both (b) and (c) Discuss
Correct Answer: has lower cut in voltage
Explanation:
Cut in voltage in Schottky diode is about 0.3 V as compared to 0.7 V in ordinary semiconductor diode.
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