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Electronic Devices and Circuits
Comments
Question
The word enhancement mode is associated with
Options
A. tunnel diode
B. MOSFET
C. JFET
D. photo diode
Correct Answer
MOSFET
Explanation
MOSFET may be depletion mode or enhancement mode.
Electronic Devices and Circuits problems
Search Results
1. In a bipolar transistor the barrier potential
Options
A. 0
B. a total of 0.7 V
C. 0.7 V across each depletion layer
D. 0.35 V
Show Answer
Scratch Pad
Discuss
Correct Answer: 0.7 V across each depletion layer
Explanation:
Since there are two
p
-
n
junctions, there are two depletion layers and 0.7 V across each layer.
2. When a voltage is applied to a semiconductor crystal then the free electrons will flow.
Options
A. towards positive terminal
B. towards negative terminal
C. either towards positive terminal or negative terminal
D. towards positive terminal for 1 ?s and towards negative terminal for next 1 ?s
Show Answer
Scratch Pad
Discuss
Correct Answer: towards positive terminal
Explanation:
Since electrons are negatively charged they will flow towards positive terminal.
3. The types of carriers in a semiconductor are
Options
A. 1
B. 2
C. 3
D. 4
Show Answer
Scratch Pad
Discuss
Correct Answer: 2
Explanation:
Holes and electrons.
4. In which region of a CE bipolar transistor is collector current almost constant?
Options
A. Saturation region
B. Active region
C. Breakdown region
D. Both saturation and active region
Show Answer
Scratch Pad
Discuss
Correct Answer: Active region
Explanation:
It is used as amplifier when it operates in this region.
5. The
v
-
i
characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
Options
A. AB
B. BC
C. CD
D. BD
Show Answer
Scratch Pad
Discuss
Correct Answer: BC
Explanation:
Small signal amplifier operation is in constant current region of characteristics.
6. At very high temperatures the extrinsic semi conductors become intrinsic because
Options
A. drive in diffusion of dopants and carriers
B. band to band transition dominants over impurity ionization
C. impurity ionization dominants over band to band transition
D. band to band transition is balanced by impurity ionization
Show Answer
Scratch Pad
Discuss
Correct Answer: band to band transition dominants over impurity ionization
Explanation:
Covalent bonds are broken.
7. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is
Options
A. 7 mA
B. 6.3 mA
C. 0.7 mA
D. 0
Show Answer
Scratch Pad
Discuss
Correct Answer: 6.3 mA
Explanation:
8. Secondary emission is always decremental.
Options
A. True
B. False
Show Answer
Scratch Pad
Discuss
Correct Answer: False
Explanation:
Sometimes it can be useful also.
9. The number of doped regions in PIN diode is
Options
A. 1
B. 2
C. 3
D. 1 or 2
Show Answer
Scratch Pad
Discuss
Correct Answer: 2
Explanation:
A PIN diode has
p
and
n
doped regions separated by intrinsic layer.
10. In an
n
channel JFET, the gate is
Options
A.
n
type
B.
p
type
C. either
n
or
p
D. partially
n
& partially
p
Show Answer
Scratch Pad
Discuss
Correct Answer:
p
type
Explanation:
Since channel is
n
type gate must be
p
type.
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