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  • Question
  • The types of carriers in a semiconductor are


  • Options
  • A. 1
  • B. 2
  • C. 3
  • D. 4

  • Correct Answer


  • Explanation
    Holes and electrons.

    Electronic Devices and Circuits problems


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    • 1. In which region of a CE bipolar transistor is collector current almost constant?

    • Options
    • A. Saturation region
    • B. Active region
    • C. Breakdown region
    • D. Both saturation and active region
    • Discuss
    • 2. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

    • Options
    • A. AB
    • B. BC
    • C. CD
    • D. BD
    • Discuss
    • 3. In which of these is reverse recovery time nearly zero?

    • Options
    • A. Zener diode
    • B. Tunnel diode
    • C. Schottky diode
    • D. PIN diode
    • Discuss
    • 4. Crossover distortion behaviour is characteristic of

    • Options
    • A. class A O/P stage
    • B. class B O/P stage
    • C. class AB output stage
    • D. common pulse O/P state
    • Discuss
    • 5. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

    • Options
    • A. True
    • B. False
    • Discuss
    • 6. When a voltage is applied to a semiconductor crystal then the free electrons will flow.

    • Options
    • A. towards positive terminal
    • B. towards negative terminal
    • C. either towards positive terminal or negative terminal
    • D. towards positive terminal for 1 ?s and towards negative terminal for next 1 ?s
    • Discuss
    • 7. In a bipolar transistor the barrier potential

    • Options
    • A. 0
    • B. a total of 0.7 V
    • C. 0.7 V across each depletion layer
    • D. 0.35 V
    • Discuss
    • 8. The word enhancement mode is associated with

    • Options
    • A. tunnel diode
    • B. MOSFET
    • C. JFET
    • D. photo diode
    • Discuss
    • 9. At very high temperatures the extrinsic semi conductors become intrinsic because

    • Options
    • A. drive in diffusion of dopants and carriers
    • B. band to band transition dominants over impurity ionization
    • C. impurity ionization dominants over band to band transition
    • D. band to band transition is balanced by impurity ionization
    • Discuss
    • 10. A potential of 7 V is applied to a silicon diode. A resistance of 1 K ohm is also in series with the diode. The current is

    • Options
    • A. 7 mA
    • B. 6.3 mA
    • C. 0.7 mA
    • D. 0
    • Discuss


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