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  • Question
  • In which region of a CE bipolar transistor is collector current almost constant?


  • Options
  • A. Saturation region
  • B. Active region
  • C. Breakdown region
  • D. Both saturation and active region

  • Correct Answer
  • Active region 

    Explanation
    It is used as amplifier when it operates in this region.

    Electronic Devices and Circuits problems


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    • 1. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification

    • Options
    • A. AB
    • B. BC
    • C. CD
    • D. BD
    • Discuss
    • 2. In which of these is reverse recovery time nearly zero?

    • Options
    • A. Zener diode
    • B. Tunnel diode
    • C. Schottky diode
    • D. PIN diode
    • Discuss
    • 3. Crossover distortion behaviour is characteristic of

    • Options
    • A. class A O/P stage
    • B. class B O/P stage
    • C. class AB output stage
    • D. common pulse O/P state
    • Discuss
    • 4. Work function is the maximum energy required by the fastest electron at 0 K to escape from the metal surface.

    • Options
    • A. True
    • B. False
    • Discuss
    • 5. An amplifier without feedback has a voltage gain of 50, input resistance of 1 k? and output resistance of 2.5 k?. The input resistance of the current shunt -ve feedback amplifier using the above amplifier with a feedback factor of 0.2 is

    • Options
    • A. 1/11 k?
    • B. 1/5 k?
    • C. 5 kW
    • D. 11 kW
    • Discuss
    • 6. The types of carriers in a semiconductor are

    • Options
    • A. 1
    • B. 2
    • C. 3
    • D. 4
    • Discuss
    • 7. When a voltage is applied to a semiconductor crystal then the free electrons will flow.

    • Options
    • A. towards positive terminal
    • B. towards negative terminal
    • C. either towards positive terminal or negative terminal
    • D. towards positive terminal for 1 ?s and towards negative terminal for next 1 ?s
    • Discuss
    • 8. In a bipolar transistor the barrier potential

    • Options
    • A. 0
    • B. a total of 0.7 V
    • C. 0.7 V across each depletion layer
    • D. 0.35 V
    • Discuss
    • 9. The word enhancement mode is associated with

    • Options
    • A. tunnel diode
    • B. MOSFET
    • C. JFET
    • D. photo diode
    • Discuss
    • 10. At very high temperatures the extrinsic semi conductors become intrinsic because

    • Options
    • A. drive in diffusion of dopants and carriers
    • B. band to band transition dominants over impurity ionization
    • C. impurity ionization dominants over band to band transition
    • D. band to band transition is balanced by impurity ionization
    • Discuss


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