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  • Question

  • Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

    Reason (R): The addition of donor impurity creates additional energy levels below conduction band.


  • Options
  • A. Both A and R are true and R is correct explanation of A
  • B. Both A and R are true but R is not a correct explanation of A
  • C. A is true but R is false
  • D. A is false but R is true

  • Correct Answer
  • Both A and R are true but R is not a correct explanation of A 

    Explanation
    A refers to type semiconductor while R refers to n type semiconductor. Both A and R are correct but independent.

    Electronic Devices and Circuits problems

    Search Results

    • 1. In a bipolar transistor which current is largest

    • Options
    • A. collector current
    • B. base current
    • C. emitter current
    • D. base current or emitter current
      • Discuss
    • 2. In the circuit of figure the function of resistor R and diode D are

    • Options
    • A. to limit the current and to protect LED against over voltage
    • B. to limit the voltage and to protect LED against over current
    • C. to limit the current and protect LED against reverse breakdown voltage.
    • D. none of the above.
      • Discuss
    • 3. At room temperature the current in an intrinsic semiconductor is due to

    • Options
    • A. holes
    • B. electrons
    • C. ions
    • D. holes and electrons
      • Discuss
    • 4. The amount of photoelectric emission current depends on

    • Options
    • A. frequency of incident radiation
    • B. intensity of incident radiation
    • C. both frequency and intensity of incident radiation
    • D. none of the above
      • Discuss
    • 5. In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then

    • Options
    • A. IEp and IEn are almost equal
    • B. IEp >> IEn
    • C. IEn >> IEp
    • D. either (a) or (c)
      • Discuss
    • 6. A transistor has two p-n junctions. The batteries should be connected such that

    • Options
    • A. both junctions are forward biased
    • B. both junctions are reverse biased
    • C. one junction is forward biased and the other is reverse biased
    • D. none of the above
      • Discuss
    • 7. A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

    • Options
    • A. 100
    • B. 99
    • C. 1.01
    • D. 0.99
      • Discuss
    • 8. A p-n junction diode has

    • Options
    • A. low forward and high reverse resistance
    • B. a non-linear v-i characteristics
    • C. zero forward current till the forward voltage reaches cut in value
    • D. all of the above
      • Discuss
    • 9. Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.

      Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.


    • Options
    • A. Both A and R are true and R is correct explanation of A
    • B. Both A and R are true but R is not a correct explanation of A
    • C. A is true but R is false
    • D. A is false but R is true
      • Discuss
    • 10. Calculate the stability factor and change in IC from 25°C to 100°C for, ? = 50, RB/ RE = 250, ?IC0 = 19.9 nA for emitter bias configuration.

    • Options
    • A. 42.53, 0.85 ?A
    • B. 40.91, 0.58 ?A
    • C. 40.91, 0.58 ?A
    • D. 41.10, 0.39 ?A
      • Discuss

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