The amount of photoelectric emission current depends on frequency of incident ra

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Question
The amount of photoelectric emission current depends on
Options
A. frequency of incident radiation
B. intensity of incident radiation
C. both frequency and intensity of incident radiation
D. none of the above

Correct Answer

intensity of incident radiation

Explanation

Only the intensity of incident radiation governs the amount of photoelectric emission.

Electronic Devices and Circuits problems

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1. In p-n-p transistor the current I_E has two components viz. I_EP due to injection of holes from p-region to n-region and I_E due to injection of electrons from n-region to p-region. Then
Options
A. I_Ep and I_En are almost equal
B. I_Ep >> I_En
C. I_En >> I_Ep
D. either (a) or (c)

2. In an n-p-n transistor, the majority carriers in the base are
Options
A. electrons
B. holes
C. both holes and electrons
D. either holes or electrons

3. A zener diode is used in
Options
A. voltage regulator circuit
B. amplifier circuits
C. both voltage regulator and amplifier circuit
D. none of the above

4. Consider the common emitter amplifier shown below with the following circuit parameters: ? = 100, g_m = 0.3861 A/V, r₀ = ? r_p = 259 ?, R_s = 1 k?, R_B = 93 k?, R_C = 250 ?, R_L = 1 kW, C₁ = ? and C₂ = 4.7mF.

The resistance seen by the source Vs is
Options
A. 258 ?
B. 1258 ?
C. 93 k?
D. ?

6. At room temperature the current in an intrinsic semiconductor is due to
Options
A. holes
B. electrons
C. ions
D. holes and electrons

7. In the circuit of figure the function of resistor R and diode D are
Options
A. to limit the current and to protect LED against over voltage
B. to limit the voltage and to protect LED against over current
C. to limit the current and protect LED against reverse breakdown voltage.
D. none of the above.

8. In a bipolar transistor which current is largest
Options
A. collector current
B. base current
C. emitter current
D. base current or emitter current

9. Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true

10. A transistor has two p-n junctions. The batteries should be connected such that
Options
A. both junctions are forward biased
B. both junctions are reverse biased
C. one junction is forward biased and the other is reverse biased
D. none of the above

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