In a semiconductor material. The hole concentration is found to be 2 x 2.5 x 101

CuriousTab

Home Aptitude

Question
In a semiconductor material. The hole concentration is found to be 2 x 2.5 x 10¹⁵ cm^-3. If mobility of carriers is 0.13 m²/ v-s. Then find the current density if electric field intensity is 3.62 x 10^-19
Options
A. 7.6237 x 10^-4 A/cm²
B. 7.6237 x 10^-5 A/cm²
C. 7.6237 x 10^-3 A/cm²
D. none of these

Correct Answer

7.6237 x 10^-4 A/cm²

Explanation

Current density J = ?E

Where ? = conductivity

Given -> ? = 0.13 m²/v-s = 0.13 x 10⁴ cm²/V sec

P = 2.25 x 10¹⁵/cm³

We have, ? n_i = 1.5 x 10¹⁰

Also n.p. = In a semiconductor material. The hole concentration is found to be 2 x 2.5 x 1015 cm-3. If mobility

? n = In a semiconductor material. The hole concentration is found to be 2 x 2.5 x 1015 cm-3. If mobility /p

In a semiconductor material. The hole concentration is found to be 2 x 2.5 x 1015 cm-3. If mobility

= (1.6 x 10^-19 x 0.13 x 10⁴ x 2.25 x 10¹⁵) x In a semiconductor material. The hole concentration is found to be 2 x 2.5 x 1015 cm-3. If mobility

= (0.468) (4.5 x 10¹⁵)

? = 2.106 x 10¹⁵ ?/cm

J = ?E

? Current density = 2.106 x 10¹⁵ x 3.620 x 10^-19

= 7.6237 x 10^-4 A/m².