The number of valence electrons in donor impurity are 5 4 3 1 Donor impurity has

CuriousTab

CuriousTab

Home Aptitude

Discussion

Home ‣ Electronics and Communication Engineering ‣ Materials and Components Comments

Question
The number of valence electrons in donor impurity are
Options
A. 5
B. 4
C. 3
D. 1

Correct Answer

5

Explanation

Donor impurity has 5 valence electrons (while silicon has 4 valence electrons).

Hence donor impurity can donate electrons.

Materials and Components problems

Search Results

1. When an electric field E is applied to solid and liquid insulating materials, the internal field E_i acting at the location of atom is such that
Options
A. E_i = E
B. E_i > E
C. E_i < E
D. E_i may be equal to or less than E

2. Assertion (A): Power loss in a conductor of resistance P = I²R.
Reason (R): When a conductor is carrying current with current density J as a result of applied field E, then heat developed/m³/ second = JE.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

3. Which of the following are donor impurities?
1. Gold
2. Phosphorus
3. Boron
4. Antimony
5. Arsenic
6. Induim
Select the correct answer using the following codes
Options
A. 1, 2, 3
B. 1, 2, 4, 6
C. 3, 4, 5, 6
D. 2, 4, 5

4. Assertion (A): Atomic number of sodium is 11.
Reason (R): Sodium has a body centred cubic lattice.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

5. At room temperature, the current in intrinsic semiconductor is due to
Options
A. holes
B. electrons
C. ions
D. holes and electrons

6. Assertion (A): In imperfect capacitors, the current does not lead the applied ac voltage by 90�.
Reason (R): When subjected to ac fields, the dielectric constant can be expressed as ?^'_r - j?^"_r.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

7. Assertion (A): Ferroelectric materials have spontaneous polarization.
Reason (R): Above curie temperature, ? = for ferro-electric materials.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

8. Which capacitor-store higher amount of energy?
Options
A. Air capacitor
B. Paper capacitor
C. Mica capacitor
D. Plastic film capacitor

9. If the temperature of an extrinsic semiconductor is increased so that the intrinsic carrier concentration is doubled, then
Options
A. the majority carrier density is doubled
B. the minority carrier density is doubled
C. the minority carrier density becomes 4 times the original value
D. both the majority and minority carrier densities double

10. Assertion (A): Magnetic susceptibility of diamagnetic materials is much less than that of paramagnetic materials.
Reason (R): For diamagnetic as well as paramagnetic materials, ?_r is nearly equal to 1.
Options
A. Both A and R are true and R is correct explanation of A
B. Both A and R are true but R is not correct explanation of A
C. A is true but R is false
D. A is false but R is true

Comments

There are no comments.

More in Electronics and Communication Engineering: